? semiconductor components industries, llc, 2010 june, 2010 -- rev. 1 1 publication order number: NTD5865NL/d NTD5865NL n--channel power mosfet 60 v, 40 a, 16 m features ? low gate charge ? fast switching ? high current capability ? 100% avalanche tested ? these devices are pb--free, halogen free and are rohs compliant maximum ratings (t j =25 ? c unless otherwise noted) parameter symbol value unit drain--to--source voltage v dss 60 v gate--to--source voltage -- continuous v gs ? 20 v gate--to--source voltage -- non--repetitive (t p <10 m s) v gs ? 30 v continuous drain current (r jc ) steady state t c =25 ? c i d 40 a t c = 100 ? c 26 power dissipation (r jc ) t c =25 ? c p d 52 w pulsed drain current t p =10 m s i dm 137 a operating junction and storage temperature t j ,t stg -- 5 5 t o 150 ? c source current (body diode) i s 40 a single pulse drai n--to--source avalanche energy (l = 0.1 mh) e as 36 mj i as 27 a lead temperature for soldering purposes (1/8 ? from case for 10 s) t l 260 ? c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. f unctional operation above the recommended operating conditions is not implied. ex tended exposure to stresses above the recommended operating conditions may affect device reliability. thermal resistance maximum ratings parameter symbol value unit junction--to--case (drain) r jc 2.4 ? c/w junction--to--ambient -- steady state (note 1) r ja 42 1. surface--mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces. dpak case 369aa (surface mount) style 2 marking diagrams & pin assignment 60 v r ds(on) max i d max v (br)dss 16 m @10v http://onsemi.com see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information 1 gate 2 drain 3 source 4 drain yww 58 65nlg y = year ww = work week 5865nl = device code g = pb--free package g s n--channel mosfet d ipak case 369d (straight lead) style 2 1 2 3 4 4 drain 2 drain 1 gate 3 source yww 58 65nlg 40 a 1 2 3 4 19 m @4.5v
NTD5865NL http://onsemi.com 2 electrical characteristics (t j =25 ? c unless otherwise noted) parameter symbol test condition min typ max unit off characteristics drain--to--source breakdown voltage v (br)dss v gs =0v,i d = 250 m a 60 v drain--to--source breakdown voltage temperature coefficient v (br)dss /t j 55 mv/ ? c zero gate voltage drain current i dss v gs =0v, v ds =60v t j =25 ? c 1.0 m a t j = 150 ? c 100 gate--to--source leakage current i gss v ds =0v,v gs = ? 20 v ? 100 na on characteristics (note 2) gate threshold voltage v gs(th) v gs =v ds ,i d = 250 m a 1.0 2.0 v negative threshold temperature coefficient v gs(th) /t j 5.6 mv/ ? c drain--to--source on resistance r ds(on) v gs =10v,i d =20a 13 16 m drain--to--source on resistance r ds(on) v gs =4.5v,i d =20a 16 19 m forward transconductance gfs v ds =15v,i d =20a 15 s charges, capacitances and gate resistances input capacitance c iss v gs =0v,f=1.0mhz, v ds =25v 1400 pf output capacitance c oss 137 reverse transfer capacitance c rss 95 total gate charge q g(tot) v gs =10v,v ds =48v, i d =40a 29 nc threshold gate charge q g(th) 1.1 gate--to--source charge q gs 4 gate--to--drain charge q gd 8 total gate charge q g(tot) v gs =4.5v,v ds =48v, i d =40a 15 nc gate resistance r g 1.3 switching characteristics (note 3) turn--on delay time t d(on) v gs =10v,v dd =48v, i d =40a,r g =2.5 8.4 ns rise time t r 12.4 turn--off delay time t d(off) 26 fall time t f 4.4 drain--source diode characteristics forward diode voltage v sd v gs =0v, i s =40a t j =25 ? c 0.95 1.2 v t j = 125 ? c 0.85 reverse recovery time t rr v gs = 0 v, dis/dt = 100 a/ m s, i s =40a 20 ns charge time ta 13 discharge time tb 7 reverse recovery charge q rr 13 nc 2. pulse test: pulse width ? 300 m s, duty cycle ? 2%. 3. switching characteristics are independent of operating junction temperatures. ordering information order number package shipping ? NTD5865NL--1g ipak (straight lead) (pb--free) 75 units / rail NTD5865NLt4g dpak (pb--free) 2500 / tape & reel ?for information on tape and reel specificat ions, including part orientation and tape si zes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NTD5865NL http://onsemi.com 3 typical characteristics 0 10 20 30 40 50 60 70 80 012345 figure 1. on--region characteristics v ds , drain--to--source voltage (v) i d , drain current (a) v gs =10v t j =25 ? c 4.5 v 4v 3.8 v 3.6 v 3.4 v 3.2 v 3v 2.8 v 2.6 v 0 10 20 30 40 50 60 70 80 12345 v ds ? 10 v t j =--55 ? c t j = 125 ? c figure 2. transfer characteristics v gs , gate--to--source voltage (v) i d , drain current (a) t j =25 ? c 0.010 0.015 0.020 0.025 0.030 2345678910 figure 3. on--resistance vs. gate voltage v gs , gate--to--source voltage (v) r ds(on) , drain--to--source resistance ( ) t j =25 ? c i d =40a 0.010 0.012 0.014 0.016 0.018 5 10152025303540 figure 4. on--resistance vs. drain current i d , drain current (a) r ds(on) , drain--to--source resistance ( ) v gs =10v t j =25 ? c v gs =4.5v 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 --50 --25 0 25 50 75 100 125 150 figure 5. on--resistance variation with temperature t j , junction temperature ( ? c) r ds(on) , drain--to--source resistance (normalized) v gs =10v i d =40a 100 1000 10000 10 20 30 40 50 60 figure 6. drain--to--source leakage current vs. voltage v ds , drain--to--source voltage (v) i dss , leakage ( m a) t j = 125 ? c t j = 150 ? c v gs =0v
NTD5865NL http://onsemi.com 4 typical characteristics 0 200 400 600 800 1000 1200 1400 1600 1800 0 102030405060 figure 7. capacitance variation v ds , drain--to--source voltage (v) c, capacitance (pf) t j =25 ? c v gs =0v c iss c oss c rss 0 2 4 6 8 10 0 5 10 15 20 25 30 q gs q t q gd figure 8. gate--to--source vs. total charge q g , total gate charge (nc) v gs , gate--to--source voltage (v) v ds =48v i d =40a t j =25 ? c 1 10 100 1000 1 10 100 figure 9. resistive switching time variation vs. gate resistance r g , gate resistance ( ) t, time (ns) v dd =48v i d =40a v gs =10v t d(off) t d(on) t r t f 0 5 10 15 20 25 30 35 40 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 figure 10. diode forward voltage vs. current v sd , source--to--drain voltage (v) i s , source current (a) t j =25 ? c v gs =0v 0.1 1 10 100 1000 0.1 1 10 100 v ds , drain--to--source voltage (v) i d , drain current (a) figure 11. maximum rated forward biased safe operating area 10 m s 100 m s 1ms dc 10 ms r ds(on) limit thermal limit package limit v gs =10v single pulse t c =25 ? c 0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 avalanche energy (mj) t j , starting junction temperature figure 12. maximum avalanche energy versus starting junction temperature i d =27a
NTD5865NL http://onsemi.com 5 typical characteristics 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 figure 13. thermal response t, pulse time (s) r jc(t) ( ? c/w) effective transient thermal resistance 0.02 0.2 0.01 0.05 duty cycle = 0.5 single pulse 0.1
NTD5865NL http://onsemi.com 6 package dimensions dpak (single guage) case 369aa--01 issue a style 2: pin 1. gate 2. drain 3. source 4. drain d a b r v s f l 2pl m 0.13 (0.005) t e c u j -- t -- seating plane z dim min max min max millimeters inches a 0.235 0.245 5.97 6.22 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.025 0.035 0.63 0.89 e 0.018 0.024 0.46 0.61 f 0.030 0.045 0.77 1.14 j 0.018 0.023 0.46 0.58 l 0.090 bsc 2.29 bsc r 0.180 0.215 4.57 5.45 s 0.024 0.040 0.60 1.01 u 0 . 0 2 0 -- -- -- 0 . 5 1 -- -- -- v 0.035 0.050 0.89 1.27 z 0 . 1 5 5 -- -- -- 3 . 9 3 -- -- -- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 ? mm inches ? scale 3:1 *for additional information on our pb--free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.386 0.410 9.80 10.40 h
NTD5865NL http://onsemi.com 7 package dimensions style 2: pin 1. gate 2. drain 3. source 4. drain 123 4 v s a k -- t -- seating plane r b f g d 3pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.245 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.180 0.215 4.45 5.45 s 0.025 0.040 0.63 1.01 v 0.035 0.050 0.89 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. z z 0.155 ------ 3.93 ------ ipak case 369d--01 issue b on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further noti ce to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation speci al, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performa nce may vary over time. all operating parameters, including ?typicals? must be validated for each custo mer application by customer?s techni cal experts. scillc does not conve y any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical impl ant into the body, or other applications intended to support or sustain life, or fo r any other application in which the failure of the scillc product could create a situation wher e personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unaut horized application, buyer shall indemnify and hold scillc and its offic ers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or in directly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such clai m alleges that scillc was negligent regarding the design or manufactur e of the part. scillc is an equal opportunity/affirmative action employer. this literature is subj ect to all applicable c opyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800--282--9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81--3--5773--3850 NTD5865NL/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303--675--2175 or 800--344--3860 toll free usa/canada fax : 303--675--2176 or 800--344--3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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